| 摘要 |
PURPOSE:To make fine a semiconductor device and speed up the operation of the same by reducing resistances of a source and a drain and a source-drain electrode wiring connected with the source and the drain by providing a spacer eliminating any stepped portion of a gate electrode when sticking a device substrate to a support sunbstrate and flattening the substrates without forming a PSG layer. CONSTITUTION:A silicon nitride film is deposited on a p type Si substrate 1, and thereafter a field insulating film 2 is formed on a device isolation region through thermal oxidization. Then, after the silicon nitride film is removed, a back gate oxide film 3 is grown through thermal oxidization, on which there is deposited a poly Si film comprising a back gate electrode material. Further, a poly Si film is etched to form a trench 5a therein, whereby a back gate electrode 4 and a spacer are isolated and formed. Successively, an SiO2 film is deposited on the entire surface to compeltely bury the SiO2 film in the trench 5a. Any stepped portion on a SiO2 film surface at the end of a field insulating film 2 is falttened by polishing the SiO2 film.
|
