| 摘要 |
<p>PURPOSE:To reduce dispersion of characteristics of a field emission type electron emission source element and reduce the operating voltage of the element by laying a first insulating layer, a first electrode layer, a second insulating layer and a second electrode layer in sequence on a substrate, and providing a groove which passes through the layers from the first insulating layer to the second electrode layer. CONSTITUTION:A first insulating layer 11, a first field application electrode layer 12, a second insulating layer 13, an electron emitting electrode layer 14, a third insulating layer 15, a second field application electrode layer 16 and an insulating portion 17 are laid on a silicon substrate 10 in that order. Each of the insulating layers is formed of silicon dioxide and each of the electrode layers is formed of tungsten. Further, a groove passing through all of the layers separates two multilayer portions from each other. The insulating portion 17 is so formed to cover the first insulating layer 11, the first field application electrode layer 12, the second insulating layer 13, the electron emitting electrode layer 14, the third insulating layer 15 and the second field application electrode layer 16 except portions of the layers which face the groove 18. Therefore, the thin film of each of the layers can be uniformly formed with good reproducibility while film thickness is ontrolled. Since the distance between the first and second electrode layers can be controlled by the film thickness of the second insulating layer, operating voltage can be reduced.</p> |
