| 摘要 |
<p>PURPOSE:To enable high input resistance, a linear transmission characteristic and high mutual conductance by providing a cathode electrode, a gate electrode, and an anode electrode, and providing a control electrode between cathode and anode. CONSTITUTION:A gate electrode 5 comprising an Mo thin film and a control electrode 6 are provided on the surface of a plane substrate 1 of quartz. A banded insulating layer 2 comprising a thin film of silicon dioxide is provided adjacent the gate electrode 5 and the control electrode 6 and a cathode electrode 3 having overhanging emission protrusions 4 is provided on the surface of the banded insulating layer 2 located adjacent the gate electrode 5. An anode electrode 7 is provided on the surface of the banded insulating layer 2 located adjacent the control electrode 6. A power amplifier of high input resistance, a linear transmission characteristic and high mutual conductance can thus be obtained.</p> |
