| 摘要 |
<p>A P-type electrode structure is provided for a Group II-VI semiconductor device having a P-type Group II-VI semiconductor layer (101;201;301) consisting of or containing Zn and Se and an ohmic metal electrode (104;204;310). To reduce the resistance of the device between the semiconductor layer (101,201,301) and the electrode (104,204,310) there is at least one intermediate layer (102;202,203;311,312) of a Group II-VI compound containing a Group II element other than Zn, for example Hg.</p> |
