High performance lateral PNP transistor with buried base contact

摘要

A high performance PNP lateral bipolar transistor is described, incorporating at least two trenches extending from the upper P- surface of a semiconductor substrate almost to a buried N+ layer. The floor of one trench is heavily N-doped to establish a connection between the buried N+ layer and an N- diffusion in the walls of the trench. When the trenches are backfilled with P+ polysilicon a lateral PNP is formed having a buried base contact.