发明名称 |
Electric circuit using multiple differential negative resistance elements, semiconductor device and neuro chip using the same |
摘要 |
A semiconductor device is disclosed, which includes a multiple negative differential resistance element having negative differential resistance characteristics at at least two places in the current-voltage characteristics, and which is suitable for constructing a neural network having a high density integration and a high reliability.
|
申请公布号 |
US5229623(A) |
申请公布日期 |
1993.07.20 |
申请号 |
US19910746288 |
申请日期 |
1991.08.13 |
申请人 |
HITACHI, LTD. |
发明人 |
TANOUE, TOMONORI;MIZUTA, HIROSHI;TAKAHASHI, SUSUMU |
分类号 |
G02F3/02;G06N3/063;G06N3/067;G11C11/56 |
主分类号 |
G02F3/02 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|