发明名称 |
Method for forming Josephson junction devices by radiation |
摘要 |
A method for forming an insulating layer in an oxide high-temperature superconductor is described. The oxide high-temperature superconductor is exposed to radiation, whereby an interface showing superconducting characteristics and/or a weak link that is present at an interface in the said oxide high-temperature superconductor is transformed to a thin insulating layer.
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申请公布号 |
US5229361(A) |
申请公布日期 |
1993.07.20 |
申请号 |
US19920862368 |
申请日期 |
1992.04.02 |
申请人 |
JAPAN ATOMIC ENERGY RESEARCH INSTITUTE |
发明人 |
SHIRAISHI, KENSUKE;OTOGURO, YASUO;YANO, KOICHI |
分类号 |
B32B18/00;C04B35/45;H01L39/24 |
主分类号 |
B32B18/00 |
代理机构 |
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代理人 |
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地址 |
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