发明名称 Method for forming Josephson junction devices by radiation
摘要 A method for forming an insulating layer in an oxide high-temperature superconductor is described. The oxide high-temperature superconductor is exposed to radiation, whereby an interface showing superconducting characteristics and/or a weak link that is present at an interface in the said oxide high-temperature superconductor is transformed to a thin insulating layer.
申请公布号 US5229361(A) 申请公布日期 1993.07.20
申请号 US19920862368 申请日期 1992.04.02
申请人 JAPAN ATOMIC ENERGY RESEARCH INSTITUTE 发明人 SHIRAISHI, KENSUKE;OTOGURO, YASUO;YANO, KOICHI
分类号 B32B18/00;C04B35/45;H01L39/24 主分类号 B32B18/00
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