| 摘要 |
The inclusions removal method for a dual metallic wire in semiconductor devices comprises (a) etching the dual metallic wire prepared with aluminum and tungsten, (b) removing inclusions in the dual metal wire with the mixed solution having the volume ratio of pure sulfuric acid to pure hydrogen peroxide, 6 to 4, (c) eliminating the solution for removing inclusions of a wafer with the strong spraying pressure of deionized water, and (d) dump cleaning the wafer with deionized water.
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