发明名称 Semiconductor memory device and method of data transfer therefor
摘要 Sense amplifiers provided for each of the bit line pairs are divided into groups to be independently driven, whereby the influence of sense amplifiers of different groups can be prevented, and therefore the destruction of data of the non-selected memory cells during data transfer can be prevented. In transferring data from the data register to the memory cell array, the sense amplifier is not activated until the stored information of the memory cells selected by the word line is fully read to the corresponding bit lines, whereby the destruction of data stored in the non-selected memory cells can be prevented.
申请公布号 US5481496(A) 申请公布日期 1996.01.02
申请号 US19940236004 申请日期 1994.05.02
申请人 MITSUBISHI DENKI KABUSHIKI KAISHA 发明人 KOBAYASHI, TOSHIFUMI;MOROOKA, YOSHIKAZU;YAMADA, MICHIHIRO;HAMAMOTO, TAKESHI
分类号 G11C7/06;G11C7/10;G11C7/12;(IPC1-7):G11C7/00;G11C8/00 主分类号 G11C7/06
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