发明名称 SEMICONDUCTOR LASER AND MANUFACTURE THEREOF
摘要 PURPOSE:To obtain a high output in a low current density without increasing the area of a semiconductor laser and with a leakage in a waveguide mode held back. CONSTITUTION:An active layer 3 formed on a substrate 1 and constructing a resonator has the shape of a flat surface formed by making the end parts of a plurality of rectilinear stripes intersect each other perpendicularly, and also it is so constructed as to comprise a reflecting mirror 9 which is the lateral surface of the active layer 3 located in the part of the perpendicular intersection of the rectilinear stripes and has an angle of 45 deg. to the directions of extension of the rectilinear stripes.
申请公布号 JPH05175612(A) 申请公布日期 1993.07.13
申请号 JP19910343500 申请日期 1991.12.25
申请人 FUJITSU LTD 发明人 OSAKA SHIGEO
分类号 G02B6/122;G02B6/12;G02B6/13;H01S5/00;H01S5/042 主分类号 G02B6/122
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