发明名称 Integral dam and heat sink for semiconductor device assembly
摘要 A metallic or ceramic dam structure surrounding a semiconductor die in a semiconductor device assembly is disclosed. The dam structure forms a cavity containing a potting compound encapsulating the die. The dam structure may also be provided with a flat lid portion, enclosing the cavity and forming a flat, exterior, heat-dissipating surface for the semiconductor device assembly. Further, an additional add-on structure, having heat dissipating fins, may be joined to the dam structure, exterior the semiconductor device assembly, to provide additional heat dissipation. The add-on structure is particularly well-suited to applications where air cooling is available.
申请公布号 US5227663(A) 申请公布日期 1993.07.13
申请号 US19920855118 申请日期 1992.03.18
申请人 LSI LOGIC CORPORATION 发明人 PATIL, SADANAND;MURPHY, ADRIAN;NEWMAN, KEITH
分类号 H05K3/30 主分类号 H05K3/30
代理机构 代理人
主权项
地址