| 摘要 |
PURPOSE:To reduce a parasitic resistant value between a Schottky electrode and an ohmic electrode. CONSTITUTION:A Schottky contact semiconductor layer 4 is installed to a Schottky electrode 3 installed to a semiconductor substrate 2 made of GaAs or the like. There is installed an ohmic contact semiconductor layer 5 having a higher impurity concentration than the semiconductor layer. Then, an ohmic electrode 6 is installed to the semiconductor layer 5, thereby forming a vertical type Schottky barrier and diode structure. |
