| 摘要 |
The device-isolating method of the semiconductor device is characterized by (a) ion-implanting an impurity into the silicon substrate (1), (b) forming an oxide film (6), a doped poly silicon (DOPOS) layer (7) and a CVD oxide film (8) on the substrate, (c) lifting off the films (6,8) and the layer (7) of the device-forming region, and then selectively etching the exposed part of the DOPOS layer, (d) selectively oxidizing the layer, (e) coating a CVD oxide film on the whole surface, and then reactively ion etching it to form a side wall spacer (10) on the side surface of the field region, and (f) forming a contact and a metal layer (12) on the DOPOS layer (8).
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