发明名称 SEMICONDUCTOR INTEGRATED CIRCUIT
摘要 <p>PURPOSE:To enable high-speed processing by evading the occupation of a CPU due to the temperature compensation of the output of a PWM circuit. CONSTITUTION:The compensated value of the output of the PWM circuit corresponding to ambient temperature is previously stored in a ROM 5 dedicated to the compensated value and the ambient temperature which is digitally converted by an A/D converter 2 actuated in response to the overflowing of a timer circuit 16 is outputted to an adder 4; and the adder 4 adds an index value corresponding to the ambient temperature to the head address of the ROM 5 and an adder 8 adds the compensated value, which is outputted from the address and latched in a latch circuit 6, to the momentary sampled value of a source signal stored in a register 7 and outputs the result to the PWM circuit 9.</p>
申请公布号 JPH05165981(A) 申请公布日期 1993.07.02
申请号 JP19910331833 申请日期 1991.12.16
申请人 MITSUBISHI ELECTRIC CORP 发明人 KIJI AKIO;MIO MASAO
分类号 G06F15/78 主分类号 G06F15/78
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