发明名称 MANUFACTURE OF DIELECTRIC ISOLATION WAFER
摘要 PURPOSE:To correctly perform positioning of a mask for forming an element regardless of dispersion of a stock removal by one reference pattern. CONSTITUTION:At the time of forming a separation groove, simultaneously a groove for a reference pattern is formed by using a mask having a cross- shaped opening, later grinding is performed after forming an oxide film and polycrystalline silicon so as to expose a cross-shaped reference pattern 18 consisting of polycrystalline silicon surrounded by an oxide film on the substrate polishing surface. Since a tip of the cross-shaped pattern 18 is always on the center lines 1x, 1y regardless of grinding dispersion, a cross pattern 19 of a mask for forming an element is matched with the tip so as to perform correct mask matching.
申请公布号 JPH05166772(A) 申请公布日期 1993.07.02
申请号 JP19910354013 申请日期 1991.12.19
申请人 OKI ELECTRIC IND CO LTD 发明人 MIZUIDE HISASHI
分类号 H01L21/304;H01L21/027;H01L21/76;H01L21/762 主分类号 H01L21/304
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