The surge absorber has a PNPN-structure semiconductor element 21 and PN-structure semiconductor element 22. A terminal 23 connected to an external P-section 21a of element 21 and a terminal 24 connected to an external N-section 21d of element 21 are used as connection terminals. An N-section 22a of PN element 22 is connected to the external P-section 21a of PNPN element 21 and a P-section 22b of element 22 is connected to an internal P-section 21c serving as a gate terminal of element 21. The communication-network surge absorber makes it possible to obtain a large surge-current resistant capacity at a low breakover voltage. The PNPN element 21 may be a triac, (Fig 3), or SCR, Fig 2, and the PN element 22 may be a Zener diode. <IMAGE>
