发明名称 |
Back bias voltage generating circuit for CMOS semiconductor device - has oscillator circuit delivering control signals for pair of pumping stages in parallel |
摘要 |
The back bias voltage generating circuit has two pumping stages, each having NMOS stages (M1,M2,M5 and M6,M7,M10) coupled to a supply voltage (Vss). A control signal generator consisting of cross coupled NOR gates provides an oscillator mode supplying inputs via a gate (X4) to both pumping stages. The signals are fed via inverter chains (X1-X3,X6-X8) to the gating NMOS devices via capacitors (M4,M9). ADVANTAGE - Stable operation with steady level.
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申请公布号 |
DE4243907(A1) |
申请公布日期 |
1993.07.01 |
申请号 |
DE19924243907 |
申请日期 |
1992.12.23 |
申请人 |
GOLD STAR ELECTRON CO., LTD., CHUNGCHEONGBUK, KR |
发明人 |
CHUNG, JIN YONG;KWAK, DEOG YOUNG, SEOUL/SOUL, KR |
分类号 |
G05F1/618;G05F3/20;G11C11/408;H02M3/07 |
主分类号 |
G05F1/618 |
代理机构 |
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主权项 |
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