发明名称 Back bias voltage generating circuit for CMOS semiconductor device - has oscillator circuit delivering control signals for pair of pumping stages in parallel
摘要 The back bias voltage generating circuit has two pumping stages, each having NMOS stages (M1,M2,M5 and M6,M7,M10) coupled to a supply voltage (Vss). A control signal generator consisting of cross coupled NOR gates provides an oscillator mode supplying inputs via a gate (X4) to both pumping stages. The signals are fed via inverter chains (X1-X3,X6-X8) to the gating NMOS devices via capacitors (M4,M9). ADVANTAGE - Stable operation with steady level.
申请公布号 DE4243907(A1) 申请公布日期 1993.07.01
申请号 DE19924243907 申请日期 1992.12.23
申请人 GOLD STAR ELECTRON CO., LTD., CHUNGCHEONGBUK, KR 发明人 CHUNG, JIN YONG;KWAK, DEOG YOUNG, SEOUL/SOUL, KR
分类号 G05F1/618;G05F3/20;G11C11/408;H02M3/07 主分类号 G05F1/618
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