Semiconductor device - comprises silicon@ layer, and foreign atom layer contg. boron ions

摘要

Semiconductor device comprises: (a) a Si layer; and (b) a 'foreign' atom layer contg. B ions, where a portion of the B ions is contained in a cluster of icosahedric structure each contg. 12 B atoms. The layer (b) is formed in the layer (a). The device is pref. produced by: (i) forming a foreign atom layer on a Si layer in a concn. such that at least a portion of the B ions is present in the form of clusters of an icosahedric structure each contg. 12 B ions; and (ii) forming a functional section using the foreign atom layer formed. ADVANTAGE - The foreign atom layer has a charge carrier that is formed by a low temp. process.