MIS, pn junction, thin film solar cell mfr.

摘要

The method involves forming grooves (30, 32) on the surface of a semiconductor substrate (12) using mechanical etch methods. A thin layer of oxide (16) is deposited on the surface of the substrate, and removed from the top of the elevations (24, 26, 28). The deposition of another oxide layer (18) is followed by sputtering of a metal layer (20). The sputtering angle is adjusted so that the metal is deposited only on the top of the elevations (24, 26, 28). The same method or traditional methods are used to form an ohmic back-contact.