| 摘要 |
<p>A ball limiting metallurgy pad structure for a semiconductor device solder bond interconnection comprising: a conductive layer that is adherent to the semiconductor device passivating layer, a relatively thick layer of a material having a high thermal conductivity, a barrier layer that protects the high conductivity layer by physically preventing any interaction or alloying with the subsequent layers, and a layer of a material that is solder wettable.</p> |
