| 摘要 |
PURPOSE:To obtain a manufacture for the photomask which is formed with high-accuracy patterns, generates a phase difference between transfer light rays to be transmitted and can be easily produced. CONSTITUTION:A photoresist 26 is applied on a glass substrate 20 on which the patterns are formed by metallic thin films 25 for light shielding. The photoresist 26 of specific regions is then exposed from the rear of the glass substrate 20. The exposed parts of the photoresists 26 are removed by development processing to form etching masks 27. The glass substrate 20 is then etched by anisotropic etching using the etching masks 27. The etching masks 27 are thereafter removed by peeling agent. |
