发明名称 |
Semiconductor device for charge transfer device |
摘要 |
In a CCD device, a plurality of trench holes are formed in high resistivity semiconductor layer and juxtaposed in a charge transfer direction, and charge transfer electrodes are buried in the trench holes. Charge transfer regions are formed in the semiconductor layer around the vicinity of the respective trench holes during a main operating state.
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申请公布号 |
US5223726(A) |
申请公布日期 |
1993.06.29 |
申请号 |
US19920821286 |
申请日期 |
1992.01.10 |
申请人 |
MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. |
发明人 |
YAMADA, TAKAHIRO;TERAKAWA, SUMIO |
分类号 |
H01L27/148 |
主分类号 |
H01L27/148 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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