| 摘要 |
PURPOSE:To improve sensitivity for detecting the defect of missize, on a mask inspecting method used for a photolithography. CONSTITUTION:This mask inspecting method has processes for catching two images formed on a mask and having equal patterns by a photodetector, respectively, and vertically or horizontally shifting one pattern image by the distance of the picture element size or below of the photodetector, and for having the back-and-white inversion of one of the pattern images, moving the other pattern image by the pitch of the relevant pattern, and inputting an image obtained by superimposing two pattern images into a comparator, and is constituted so that the asymmetry of a region except a part where two pattern images are superimposed, as the region outputted to the comparator as a signal, is obtained in an area ratio, and the defect of the missize of the pattern is detected. |
