| 摘要 |
PURPOSE:To provide a field effect transistor which can get excellent properties in spite of micronization and has even a structure similar to an SGT. CONSTITUTION:A p<+>-type gate electrode 7 is made through a gate insulating film 6 so as to surround an n-type column-shaped silicon 1, where the center is a channel, and a source electrode 4 and a drain electrode 5 are made through n<+>-type layers 2 and 3, respectively, at both ends of the column-shaped silicon 1, and a channel current is controlled by controlling the a depletion layer, which extends toward the center from the periphery of the column-shaped silicon 1 by the bias given to the gate electrode 7. |
