| 摘要 |
<p>PURPOSE:To satisfactorily form an electrode by reducing mixed crystal ratio of electrode forming surfaces of a clad layer. CONSTITUTION:A P-type GaAlAs clad layer 1, an active layer 2, and an n-type GaAlAs layer 3 are formed on a GaAs substrate 7 to be removed. The layer 1 has a forbidden band width larger than a wavelength of an emitted light and an Al As mixed crystal ratio has a profile increasing from the substrate side toward the active layer side. The profile is controlled by a temperature difference method. The mixed crystal ratio (x) is 0.05 in the substrate side and 0.35 in a boundary of the layer 2. The mixed crystal ratio of the layer 3 has a normal profile gradually decreasing from the active layer side toward the surface side. The surface mixed crystal ratio (x) is 0.05, and the mixed crystal ratio of the active layer boundary is set to 0.35. A partial electrode 8 is formed on the rear surface of the layer 1, and an entire electrode 9 is formed on the front surface of the layer 3. The light emitting side partial electrode 8 is bonded to be wired.</p> |
