| 摘要 |
PURPOSE:To obtain a CdS-MnS solid solution thin film having a wide band gap, by depositing CdS and Mn concurrently on a substrate. CONSTITUTION:On a glass substrate, at a substrate temperature of 150 deg.C, deposited are concurrently CdS and Mn using two evaporation sources, and CdS-MnS solid solution thin films (Cd1-xMnxS) of about 0.5mum in thickness are formed changing the ratio of CdS to MnS in a wide range, and the thin films are analyzed by an X-ray diffraction method. As a result, in a wide solid solution range (0<x<1), the same wurtzite crystal structure as that of CdS is exhibited, and the absorption wavelength of a spectral transmittance Tr is shifted to the side of short wavelength when x exceeds a certain value (x-0.14). Thus, the band gap of the solid solution thin film is made wide, but its electrical conductivity is reduced generally when increasing x. Therefore, for example, by depositing In of 1-3mol% on a host crystal and annealing the host crystal at 200-400 deg.C in N2 gas to diffuse In into it additionally, a CdS-MnS solid solution thin film effective for improving the conversion efficiency of a solar cell, which has a wide band gap and a low resistance, can be realized. |
