PROCESS FOR FABRICATING A SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE HAVING MISFETS,申请号SG19930000431-传众专利搜索

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发明名称	PROCESS FOR FABRICATING A SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE HAVING MISFETS
摘要
申请公布号	SG43193(G)	申请公布日期	1993.06.25
申请号	SG19930000431	申请日期	1993.04.13
申请人	HITACHI LTD	发明人
分类号	H01L21/8238;H01L27/088;H01L27/092;H01L29/78;(IPC1-7):H01L29/78;H01L21/82;H01L27/08;H01L29/08;H01L29/10	主分类号	H01L21/8238
代理机构		代理人
主权项
地址

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