| 摘要 |
The semiconductor memory cell is mfd. by (a) forming a field oxide film (2), a gate oxide film (3), a gate polysilicon (4), a source/ drain region (6) and a first oxide film (5), and then selectively etching the film (5) on the substrate (1) by the masking process to form a buried contact, (b) forming a storage node polysilicon (7) and a capacitor insulating film (8), (c) forming a plate polysilicon (9) and a second oxide film (10), and then patterning the polysilicon (9) and the polysilicon (4) by the anisotrophic dry-etching process, (d) forming a third oxide film (11) to remain on the contact side wall, (e) partially etching the polysilicon (9) and the film (12) using a photoresist (12) as a mask, (f) forming the doped polysilicon (13), and then patterning it to form a polysilicon plug, and (g) forming an insulating film (14), and then contact-etching it to form a bitline (15).
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