VERFAHREN ZUR HERSTELLUNG EINES SELBSTJUSTIERT POSITIONIERTEN METALLKONTAKTES.

摘要

The self-adjusting metal gate contact is applied to a semiconductor using an optical photomask technique, at least one dimension of the contact being less than the wavelength of the employed light. Pref. this dimension is between 0.1 and 0.3 micrometer. The contact metal (40) is applied to the semiconductor (1) after covering part of its surface with a masking element and is covered by a lift-off layer (41) before removal of the latter. An insulation layer (60) is applied to their side edges via an etching process and the metal contact (81) is applied between the insulation layer (60) and the surface of the semiconductor (1).