| 摘要 |
PURPOSE:To form favorable interface with a semiconductor layer by means of a gate insulating, and raise the breakdown strength in insulation of the gate insulating film. CONSTITUTION:A semiconductor layer 2 is patterned on the topside of an insulating film 1. A silicon oxide layer 3a is stacked all over the surfaces of the semiconductor layer 2 and the insulating substrate 1, and a silicon nitride layer 3b is stacked thicker than the silicon oxide layer 3a on the topside of the silicon oxide layer 3a by plasma CVD method. A gate electrode 4 is patterned on the topside of the silicon nitride layer 3b at the section corresponding to a channel region 2a. This way, the gate insulating film 3 consists of the silicon oxide layer 3a and the silicon nitride layer 3b, and besides the silicon oxide layer 3a, which forms the favorable interface with the semiconductor layer 2, is provided on the semiconductor layer 2, and the silicon nitride layer 3b high in breakdown strength in insulation is provided thicker than that silicon oxide layer 3a on the silicon oxide layer 3a.
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