FORMING METHOD OF METAL OXIDE FILM

摘要

The metal oxide film (tantalum oxide film) is mfd. by forming a thin tantalum layer on the silicon wafer by the sputtering method, forming a tantalum oxide film comprising tantalum particles, pores and thin parts by sputtering a tantalum target under the argon and oxygen (80:20) gas atmosphere, and liquid- oxidizing the tantalum oxide film to form a dense film. The storage capacitor is mfd. by forming an aluminium electrode on the obtd. dense film.