Method for patterning a layer on oxide superconductor thin film and superconducting device manufactured thereby.

摘要

A method for patterning an oxide superconductor thin film, comprising a step of forming a SiO2 layer on the oxide superconductor thin film, patterning the SiO2 layer so as to form the same pattern as that of the oxide superconductor thin film which will be patterned, etching the oxide superconductor thin film by using the patterned SiO2 layer as a mask, and removing the SiO2 layer by using a weak HF solution, a buffer solution including HF or a mixture including HF