| 摘要 |
A method for producing a planar type electron radiating device including a plurality of cathodes having pointed ends on a major surface of a substrate, and a gate electrode having holes in the vicinity of the cathodes, is disclosed. After a hole is formed in the gate electrode and a silicon oxide film for laying a part of the major surface of the substrate to outside, a chromium thin film as a tight metal bonding film is deposited on the bottom of the hole prior to formation of the cathode, and the cathode is formed on the chromium thin film to prevent the cathode from being detached during the production process.
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