发明名称 |
Stacked V-cell capacitor |
摘要 |
A stacked v-cell (SVC) capacitor using a modified stacked capacitor storage cell fabrication process. The SVC capacitor is made up of polysilicon structure, having a v-shaped cross-section, located at a buried contact and extending to an adjacent storage node overlaid by polysilicon with a dielectric sandwiched in between. The addition of the polysilicon structure increases storage capability 70% without enlarging the surface area defined for a normal stacked capacitor cell.
|
申请公布号 |
US5219778(A) |
申请公布日期 |
1993.06.15 |
申请号 |
US19910800803 |
申请日期 |
1991.11.27 |
申请人 |
MICRON TECHNOLOGY, INC. |
发明人 |
DENNISON, CHARLES H.;LEE, RUOJIA;LIU, YAUH-CHING;FAZAN, PIERRE |
分类号 |
H01L21/02;H01L21/8242;H01L27/108 |
主分类号 |
H01L21/02 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|