发明名称 Stacked V-cell capacitor
摘要 A stacked v-cell (SVC) capacitor using a modified stacked capacitor storage cell fabrication process. The SVC capacitor is made up of polysilicon structure, having a v-shaped cross-section, located at a buried contact and extending to an adjacent storage node overlaid by polysilicon with a dielectric sandwiched in between. The addition of the polysilicon structure increases storage capability 70% without enlarging the surface area defined for a normal stacked capacitor cell.
申请公布号 US5219778(A) 申请公布日期 1993.06.15
申请号 US19910800803 申请日期 1991.11.27
申请人 MICRON TECHNOLOGY, INC. 发明人 DENNISON, CHARLES H.;LEE, RUOJIA;LIU, YAUH-CHING;FAZAN, PIERRE
分类号 H01L21/02;H01L21/8242;H01L27/108 主分类号 H01L21/02
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