发明名称 |
Sublithographic antifuse method for manufacturing |
摘要 |
In one described embodiment of the present invention, a method for manufacturing a sublithographic semiconductor feature is disclosed. This method comprises: depositing a feature material on a substrate (14); depositing and patterning a resist material (20) over said feature material; vertically, anisotropically etching said feature material to form a feature pattern (18) with substantially vertical sidewalls underlying said resist material pattern (20); isotropically etching said feature pattern (18) such that said feature pattern (18) sidewalls are undercut from beneath said resist material pattern (20) to form a reduced geometry feature (18) whereby said reduced geometry feature (18) has a geometry less than that of the overlying resist material pattern (20). Another described embodiment comprises an antifuse formed by the above method wherein the antifuse dielectric (24) is a nitride-oxide (N-O) layer. The further advantage gained using this structure is that the programming voltage required is substantially reduced due to the asymmetric current conduction characteristics of the N-O dielectric. This lower programming voltage enhances the scalability of this structure to smaller processes as the need for high voltage transistors is reduced. Other devices, systems and methods are also disclosed.
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申请公布号 |
US5219782(A) |
申请公布日期 |
1993.06.15 |
申请号 |
US19920860473 |
申请日期 |
1992.03.30 |
申请人 |
TEXAS INSTRUMENTS INCORPORATED |
发明人 |
LIU, DAVID K.-Y.;CHEN, KUEING-LONG |
分类号 |
H01L23/525 |
主分类号 |
H01L23/525 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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