SEMICONDUCTOR DEVICE AND MANUFACTURE THEREOF

摘要

PURPOSE:To completely, charge an Al alloy in a contact hole having a high aspect ratio in a semiconductor device having Al wirings. CONSTITUTION:An Al alloy having a lower eutectic temperature than that of an Al-Si alloy is charged in contact holes 131a, 132b, 131b, 132a formed on an interlayer insulating film on P<+> type diffused layers 111a, 111b, N+ type diffused layers 112a, 112b formed on a P-type Si substrate 101. After contact holes are formed, an Si film 141a is sputtered on the entire surface, then an AlGe alloy film 151a is, for example, spluttered, thermally fluidized, further alloy-reacted with the film 141a to form an Al-Ge-Si alloy film 152a from the alloy. At the stage in which the film 152a is formed, the thermal fluidization is stopped.