| 摘要 |
<p>PURPOSE:To provide the exposure mask which is applied to an actual integrated circuit pattern to obtain effect and also displays maximum phase shift effect. CONSTITUTION:A transmission part is sectioned into four areas S0-S3, which are a 1st area, a 2nd area having a 90 deg. phase difference from the 1st area, a 3rd area having a 180 deg. phase difference from the 1st area, and a 4th area having a 270 deg. phase difference from the 1st area; when the out-of-phase areas are adjacent at the transmission part, the phase difference between those areas is 90 deg. and when the out-of-phase areas are adjacent to each other across a light shield part, the phase difference between those areas is 180 deg..</p> |
