发明名称 MEMORY TESTER
摘要 PURPOSE:To store defective data of an MUT (memory to be tested) into a memory at the operating rate of a memory tester and to read out thus stored data. CONSTITUTION:A pattern generating circuit 1 applies a test pattern 1B onto an MUT 2 and an output 2A therefrom is fed to a decision circuit 3. An output 3A from the decision circuit 3 is fed to an FIFO memory circuit 4 and when read out from a memory circuit 6 is interrupted temporarily, a selection circuit 5 selects an output 4A from the FIFO memory circuit 4. An address data to be written from the FIFO memory 4 into the memory circuit 6 is then read out and a logical value '1' is written at an address of the memory circuit 6 corresponding to a defective address of the MUT 2 thus reading out the content of the memory circuit 6 when the MUT 2 is being checked.
申请公布号 JPH05144295(A) 申请公布日期 1993.06.11
申请号 JP19910335617 申请日期 1991.11.25
申请人 ANDO ELECTRIC CO LTD 发明人 IZUHARA MASAYOSHI
分类号 G01R31/28;G06F11/22;G11C29/00;G11C29/44;G11C29/56 主分类号 G01R31/28
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