| 摘要 |
A positive resist composition is provided to form a resist pattern satisfying high resolution and having improved development defects and dense bias in microprocessing of a semiconductor device using KrF excimer laser, electron beams or EUV. A positive resist composition comprises: (B1) a resin containing at least one repeating unit selected from repeating units represented by the following formulae (Ia) and (IIa) and showing an increase in solubility to an aqueous alkali solubility by being decomposed under the action of an acid; (B2) a resin containing at least one repeating units selected from repeating units represented by the following formulae (Ib) and (IIb) as well as repeating units represented by the following formula (III) having at least two aromatic structures, and showing an increase in solubility to an aqueous alkali solubility by being decomposed under the action of an acid; and (A) a compound generating an acid under irradiation of active rays or radiation. In the formulae, X is H, CH3 or halogen; each of A1, A2, A3 and A4 is H or a group capable of leaving under the action of an acid; L is a monovalent organic group, halogen, cyano or nitro; n is an integer of 1-3; m is an integer of 0-2; Y is H, CH3, halogen, cyano, hydroxymethyl, alkoxymethyl or acryoxymethyl; each of L1 and L2 is a divalent linking group including a single bond, arylene, aralkylene, carbonyl, ester, imino, ether or a combination thereof; each of AR1 and AR2 is phenylene or naphthalene; and n is an integer of 0-2(formula III).
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