| 摘要 |
<p>The method comprises the following steps: (a) producing a GaAs or InP substrat (1); (b) forming by epitaxy an aluminium rich (at least 40 %) intermediate AlGaAs or AlInAs layer (2) on the substrat; (c) forming by epitaxy an active layer (3) of an aluminum rich material on this intermediate layer; (d) forming a series of components (5) by etching and metallization; (e) applying a protective layer (6) of a passivation material or a photoresist; (f) selective etching of this protective layer to expose the intermediate layer between the components; (g) fixing a common support plate (8) on the assembly mechanically securing the components, and; (h) disolving the intermediate layer material chemically by means of a solvent in the areas (7) exposed, leaving intact the other materials so as to separate the substrate from the components without dissolving it.</p> |
