Method for evaluation of spatial distribution of deep level concentration in semiconductor crystal.

摘要

Spatial distribution of deep level concentration near the surface of a semiconductor wafer is evaluated quickly and accurately by a method which comprises at least a step of scanning the surface of the semiconductor wafer in the X and Y direction with a laser beam for carrier excitation from a laser beam source in accordance with the room-temperature photoluminescence (PL) process thereby measuring wafer map (MD) of deep level PL intensity (ID) and wafer map (MB) of band edge PL intensity (IB) in the semiconductor wafer and a step of dividing the wafer map (MD) of PL intensity (ID) by the nu min th power of the wafer map (MB) of PL intensity (IB) [the magnitude of the nu min th power representing the numerical value obtained by empirically confirming the dependence of the band ede PL intensity (IB) on the power of the excitation laser beam thereby determining the spatial distribution (MN) of the relative value of deep level concentration (ND) and performing the evaluation of the distribution of relative deep level concentration on the basis of the spatial distribution (MN) of the relative deep level concentration (ND). <IMAGE>