| 主权项 |
1. A method of operating a storage device including a non-volatile memory and a memory controller configured to control the non-volatile memory, wherein the non-volatile memory comprises:
a plurality of cell strings, which are arranged in rows and columns on a substrate, each cell string comprising a ground selection transistor, a plurality of memory cells, and a string selection transistor sequentially stacked on the substrate in a direction normal to a top surface of the substrate, the memory cells of each cell string located at different levels over the top surface of the substrate; first to M-th string selection lines connected to first to M-th rows of the plurality of cell strings respectively; and first to N-th word lines connected to first to N-th levels of memory cells of the plurality of cell strings respectively, the method comprising:
receiving a read command and a read address;performing a read operation on selected memory cells corresponding to a selected string selection line and a selected word line, which are selected based on the read address, according to the read command; andperforming a reliability verification read on unselected memory cells corresponding to an unselected string selection line that, during the read operation, is unselected, wherein data read by the read operation are output to an external device, and data read by the reliability verification read are not output to the external device. |
