THERMOELECTRIC MATERIALS EMPLOYING Cr-DOPED N-TYPE PbSe AND PbTe1- x Se x AND METHODS OF MANUFACTURING

摘要

Systems and methods discussed herein relate to Pb-Se based thermoelectric materials for use in thermoelectric applications, the thermoelectric materials may comprise one or more dopants and are ball-milled into a powder and hot-pressed to form pressed components. The pressed components comprise improved room temperature properties, including a ZT above about 0.5 from about 300 K to about 780 K, which leads to improved device efficiency and overall function.