发明名称 |
SEMICONDUCTOR DEVICE |
摘要 |
PURPOSE:To obtain a semiconductor equipment featuring high rate and high withstanding voltage without increasing the reverse leakage current and forward voltage drop. CONSTITUTION:An N-type semiconductor layer which is installed on a N<+> semiconductor layer forms PN junction. While at the same time, a P<+>-type semiconductor is formed so that the exposed portions of the N-type semiconductor can be structured on the surface of the N-type semiconductor layer. A metallic electrode having Schottky contact or ohmic contact is installed by contacting along the surface of N-type and P<+>-type semiconductor layer. The relation between D and W is shown as D>=0.5W. In this case, D indicates the depth from the contact surface (e) of N-type semiconductor layer and a metallic electrode. W indicates a closest distance in the area facing with P<+>-type semiconductor layer just under (e) which is the contact surface. |
申请公布号 |
JPH05136015(A) |
申请公布日期 |
1993.06.01 |
申请号 |
JP19920058394 |
申请日期 |
1992.03.16 |
申请人 |
SHINDENGEN ELECTRIC MFG CO LTD |
发明人 |
SUGA TAKASHI;WAKATABE MASARU;TANAKA MITSUGI;KURI SHINJI;SUGIYAMA AKIRA |
分类号 |
H01L21/02;H01L21/331;H01L29/47;H01L29/73;H01L29/732;H01L29/74;H01L29/80;H01L29/872 |
主分类号 |
H01L21/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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