发明名称 SEMICONDUCTOR DEVICE
摘要 PURPOSE:To obtain a semiconductor equipment featuring high rate and high withstanding voltage without increasing the reverse leakage current and forward voltage drop. CONSTITUTION:An N-type semiconductor layer which is installed on a N<+> semiconductor layer forms PN junction. While at the same time, a P<+>-type semiconductor is formed so that the exposed portions of the N-type semiconductor can be structured on the surface of the N-type semiconductor layer. A metallic electrode having Schottky contact or ohmic contact is installed by contacting along the surface of N-type and P<+>-type semiconductor layer. The relation between D and W is shown as D>=0.5W. In this case, D indicates the depth from the contact surface (e) of N-type semiconductor layer and a metallic electrode. W indicates a closest distance in the area facing with P<+>-type semiconductor layer just under (e) which is the contact surface.
申请公布号 JPH05136015(A) 申请公布日期 1993.06.01
申请号 JP19920058394 申请日期 1992.03.16
申请人 SHINDENGEN ELECTRIC MFG CO LTD 发明人 SUGA TAKASHI;WAKATABE MASARU;TANAKA MITSUGI;KURI SHINJI;SUGIYAMA AKIRA
分类号 H01L21/02;H01L21/331;H01L29/47;H01L29/73;H01L29/732;H01L29/74;H01L29/80;H01L29/872 主分类号 H01L21/02
代理机构 代理人
主权项
地址
您可能感兴趣的专利