Method and system for forming patterns using charged particle beam lithography with variable pattern dosage

摘要

A method and system for fracturing or mask data preparation or optical proximity correction or proximity effect correction or mask process correction is disclosed in which a set of shaped beam shots is determined that is capable of forming a pattern on a surface, where the set of shots provides different dosages to different parts of the pattern, and where the dose margin from the set of shots is calculated. A method for forming patterns on a surface is also disclosed.

主权项

1. A method for fracturing or mask data preparation or proximity effect correction or optical proximity correction or mask process correction comprising the step of:
determining a plurality of shaped beam charged particle beam shots for an exposure pass, wherein the plurality of shaped beam shots, when used in a charged particle beam writer, produces a dosage on a resist-coated surface, wherein the dosage on the resist-coated surface forms a pattern on the resist-coated surface, wherein the pattern on the surface comprises a pattern perimeter, wherein the resist comprises a resist threshold, wherein the plurality of shaped beam shots provides different dosages to different parts of the pattern, wherein the step of determining comprises calculating a dose margin from the plurality of shaped beam shots, wherein the dose margin is a slope of the resist dosage, at the resist threshold, with respect to a linear dimension perpendicular to the pattern perimeter, and wherein the step of determining is performed using one or more computing hardware processors.