| 摘要 |
PURPOSE:To obtain a semiconductor device wherein its integration density with reference to its occupied area can be increased and its wiring density can be lowered. CONSTITUTION:First outer leads 10, at a first film carrier tape 1, which have been extracted from a first semiconductor chip 7 are bent to be U-shaped; they are pasted so as to face a first base film 2; second outer leads 21 connected to a second semiconductor chip 17 are bonded partially to a rear pattern 15 formed on the first base film 2. |
