| 摘要 |
PURPOSE:To form a small-gage wire simply with excellent reproducibility by etching a semi-insulating GaAs substrate by a first solution, treating the etched semi-insulating GaAs substrate by a second solution and epitaxial-growing the treated semi-insulating GaAs substrate. CONSTITUTION:SiO2 films 2 are patterned and formed so as to cover sections, to which small-gage wires must be shaped, in a semi-insulating GaAs substrate 1 first. GaAs surfaces not covered with the SiO2 films 2 are etched for two min by H2SO4:H2O:H2O2 as a first solution. The SiO2 layers 2 are removed by HF:H2O as a second solution, and GaAs surfaces 4 after removal are pretreated. An I-AlGaAs layer 3 is formed through one-time epitaxial growth. When a crystal is grown by using molecular-beam epitaxial crystal growth normally, impurity segregation is generated in the surface of the GaAs substrate 1 through heating pretreatment. The segregation of carriers is generated only in an HF group treated region 4, to which H2SO4 group treatment is not conducted in this invention, and the small-gage wires are formed to the sections. |
