MANUFACTURE OF COMPOUND SEMICONDUCTOR QUANTUM DEVICE AND PRODUCT MANUFACTURED BY METHOD THEREOF

摘要

PURPOSE: To provide a method for manufacturing a new quantum thin line or quantum dot and further improve the performance of a device by applying a semiconductor structure with the quantum thin line or quantum dot to an electronic device. CONSTITUTION: Conductivity is permanently recovered by injecting a proper amount of III group element, such as Ga ion into the arbitrary region of a high-resistance GaAs layer 2. At a region 3 where the element is injected, As fine crystal is changed into GaAs single crystal by a solid phase reaction of Ga+As→GaAs by a proper annealing process, thus eliminating the depletion region of a carrier, to generate a carrier inside the ion-implanted region 3 of the GaAs layer 2, containing an excessive amount of As fine crystal or point defect that is doped but has a high resistance and entrapping it.