Array substrate and liquid crystal display module including TFT having improved mobility and method of fabricating the same

摘要

An array substrate for a liquid crystal display device includes a gate line and a gate electrode on a substrate, the gate electrode connected to the gate line; a gate insulating layer on the gate line and the gate electrode; an active layer of intrinsic amorphous silicon on the gate insulating layer and corresponding to the gate electrode; an ohmic contact layer of impurity-doped amorphous silicon on the active layer; a data line crossing the gate line; a source electrode on the ohmic contact layer and connected to the data line; a drain electrode on the ohmic contact layer and spaced apart from the source electrode; a passivation layer on the source and drain electrodes and including a drain contact hole exposing a portion of the drain electrode; and a pixel electrode on the passivation layer and connected to the drain electrode through the drain contact hole.

主权项

1. An array substrate for a liquid crystal display device, comprising:
a gate line and a gate electrode on a substrate, the gate electrode connected to the gate line; a gate insulating layer on the gate line and the gate electrode; a semiconductor layer including an active layer of intrinsic amorphous silicon and an ohmic contact layer of impurity doped amorphous silicon; a data line crossing the gate line; a source electrode on the ohmic contact layer and connected to the data line; a drain electrode on the ohmic contact layer and spaced apart from the source electrode; a passivation layer on the source electrode and the drain electrode and including a drain contact hole exposing a portion of the drain electrode; a pixel electrode on the passivation layer and connected to the drain electrode through the drain contact hole; and a metal oxide layer on the ohmic contact layer and only in a space between the source electrode and the drain electrode, wherein the active layer is disposed on the gate insulating layer, wherein the ohmic contact layer is disposed between the active layer and the source and drain electrodes, wherein the metal oxide layer contacts an upper surface of the ohmic contact layer in a region over a center of the gate electrode, and the ohmic layer contacts the active layer, and wherein the ohmic contact layer covers an entire top surface of the active layer in the space between the source electrode and the drain electrode.