Semiconductor device and method of forming 3D semiconductor package with semiconductor die stacked over semiconductor wafer

摘要

A semiconductor device has a substrate and plurality of first semiconductor die having conductive vias formed through the first semiconductor die mounted with an active surface oriented toward the substrate. An interconnect structure, such as bumps or conductive pillars, is formed over the substrate between the first semiconductor die. A second semiconductor die is mounted to the first semiconductor die. The second semiconductor die is electrically connected through the interconnect structure to the substrate and through the conductive vias to the first semiconductor die. An underfill material is deposited between the first semiconductor die and substrate. Discrete electronic components can be mounted to the substrate. A heat spreader or shielding layer is mounted over the first and second semiconductor die and substrate. Alternatively, an encapsulant is formed over the die and substrate and conductive vias or bumps are formed in the encapsulant electrically connected to the first die.

主权项

1. A method of making a semiconductor device, comprising:
providing a substrate formed from a semiconductor material and including a plurality of first conductive vias formed through the substrate; forming an insulating layer over the substrate and first conductive vias; removing a portion of the insulating layer to expose the first conductive vias; depositing a conductive material over the substrate in the insulating layer to form conductive traces in contact with the first conductive vias; providing a plurality of first semiconductor die including second conductive vias formed through the first semiconductor die; disposing the plurality of first semiconductor die over the substrate including an active surface oriented toward the substrate; forming an interconnect structure on the conductive traces and a surface of the substrate outside the first semiconductor die and between side-by-side ones of the first semiconductor die; disposing a second semiconductor die over the first semiconductor die and coupled to the interconnect structure with each of the first semiconductor die completely within a footprint of the second semiconductor die, the second semiconductor die being electrically connected through the interconnect structure to the conductive traces of the substrate and through the second conductive vias to the first semiconductor die; disposing a thermal interface material on the second semiconductor die; and disposing a heat spreader over the second semiconductor die and extending to a top surface of the conductive traces of the substrate after disposing the thermal interface material on the second semiconductor die.